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Magnetic RAM(MRAM) Developed by IIT-Mandi Engineers

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How IIT students made MRAM

In a piece of exciting news for techies in India and around the world, the research team at IIT-Mandi has developed Magnetic Random Access Memory (MRAM), which claims to be faster, more energy-efficient and capable of storing more information during a smaller volume as compared to the prevailing data storing technologies.

The Spin-transfer torque-based nano spintronic device during which data is represented as a spin of electrons utilizes the spinning electrons to transmit and process information. By harnessing this spin of electrons from the magnetic state results in Spin-Transfer Torque-Magnetic Random Access Memory (STT-MRAM). So, unlike normal electronic devices that are driven by electron charges, the cutting-edge technology promises better storage capabilities than conventional electric charge-based RAM.

“Universal memory solutions must have high storage density, ultrafast operability, and non-volatility, that is, ready to retain data even when there’s no power. This need is especially relevant in times because the abundance of digital devices is predicted to get data volumes requiring 1 trillion hard drives at every instant by 2024,” said Satinder K Sharma, professor at College of Computing and EE, IIT Mandi. “Existing semiconductor RAM cannot meet the huge demands of knowledge storage.”

Speaking about the advantages of the newly developed technology, he said, “STT-MRAM devices are non-volatile and have much higher storage densities and endurance than current CMOS based RAM technologies. Another advantage of those sorts of memory is that they will be integrated with conventional silicon-based memory technologies, which ends up in huge storage potential,”

Till now, the most important hurdle with reference to the scalability of spintronics-based RAM had been the high operating current required. But with the STT-MRAM innovation, it seems this issue has now been resolved. “Our devices have very low switching current density and free-layer switching duration of but three nanoseconds. this is often a really promising start and further optimization will make them prospective candidates for next-generation RAM devices,” said Srikant Srinivasan, professor at College of Computing and EE, IIT Mandi.

Data science experts predict that the demand for memory capacity will outpace production by the top of 2020. Therefore, it’s hoped that this demand will soon be met and computer data loss thanks to power supply interruptions will come to an end, hence introducing cutting-edge technology for the subsequent generation of computing devices.

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